The researchers of WITH they developed a new type of three-dimensional transistor using ultra-thin semiconductor materials, capable of overcoming the fundamental limitations of traditional silicon transistors. The device promises performance comparable to the most advanced silicon transistors, but operating at much lower voltages and with greater energy efficiency.
This innovation could have an impact on the electronics industry, enabling more powerful and efficient chips to be made for computers, smartphones and other devices. The overcoming of the so-called “Boltzmann’s tyranny”which limits the efficiency of silicon transistors, opens up new possibilities for the evolution of computational technologies, especially in view of the growing demand for computing linked to artificial intelligence.
The new transistors exploit quantum properties of materials to simultaneously achieve low operating voltage and high performance in an area of a few square nanometers. Their three-dimensional structure with ultra-thin vertical nanowires would allow a much larger number of transistors to be packed onto a single chip.
“With this technology we could obtain all the current functionality of silicon, but with much higher energy efficiency”explains Yanjie Shao, a postdoctoral researcher at MIT and lead author of the study published in Nature Electronics.
The researchers used a combination of semiconductor materials such as gallium antimonide and indium arsenide, designing the devices to exploit the quantum tunneling phenomenon. This allows electrons to cross the energy barrier rather than overriding it, allowing faster and more efficient switching of the transistor.
Making these tiny devices required extremely precise manufacturing techniques. Using state-of-the-art facilities at MIT.nanothe researchers were able to precisely control the 3D geometry of the transistors, creating vertical nanostructures with a diameter of just 6 nanometers.
This careful engineering made it possible to simultaneously obtain a steep switching slope and a high current, exploiting the phenomenon of quantum confinement. “We have a lot of flexibility in designing these heterostructures of materials to obtain an extremely thin tunnel barrier, which allows us to achieve very high currents”says Shao.
Tests on the devices showed a switching slope below the fundamental limit achievable with conventional silicon transistors, with approximately 20 times higher performance compared to similar tunnel transistors.
The researchers used a combination of semiconductor materials such as gallium antimonide and indium arsenide
The team is now working to improve manufacturing methods and achieve more uniform transistors across an entire chip. Given the extreme miniaturization, even variations of 1 nanometer can significantly influence the behavior of electrons.
Researchers are also exploring vertical fin-like structures, as well as vertical nanowires, which could potentially improve the uniformity of devices on a chip.
Second Aryan Afzalianresearcher at the nanoelectronics research organization imec not involved in the study, “This work is definitely in the right direction, significantly improving the performance of tunneling transistors. It demonstrates a steep slope along with record-breaking drive current, highlighting the importance of small size, extreme confinement, and low-defect materials and interfaces. “
Although there are still many critical issues to overcome before possible commercialization, this research certainly represents an important conceptual step forward towards more efficient and advanced transistors.
Source: www.tomshw.it
