Samsung’s QLC 9th generation V-NAND will offer increased capacity and performance while remaining energy efficient for AI workloads.
Samsung is applying various technologies to mass produce 9th generation Quad Level Cell V-NAND for AI applications.
A few months ago, Samsung began mass production of its first TLC (Triple Level Cell) 9th Gen V-NAND, which offers a 50% increase in bit density. Today, it announced the mass production of QLC 9th Gen V-NAND, which provides high-performance and energy-efficient operation for AI applications. QLC V-NAND is produced by combining different technologies, which makes it possible to achieve the currently highest number of layers.
QLC or Quad Level Cell V-NAND introduces technologies such as Channel Hole Etching, Designed Mold and Predictive Program to ensure that the memory reaches high density in a compact format, with better read and write reliability.
He also stated that Samsung’s mission is to consolidate its leadership in the storage segment, given that the enterprise SSD market is growing rapidly and the demand for better hardware to run AI applications is growing. To ensure the company stays ahead of the competition, QLC 9th Gen V-NAND will first be available in branded consumer products and then expand to UFS, PCs and server SSDs.
- Samsung’s Channel Hole Etching technology was used to achieve the highest number of layers in the industry with the help of a double structure.
- QLC V-NAND boasts an 86% higher density than the previous generation of QLC V-NAND.
- The adoption of engineered molds has improved data retention performance by approximately 20% over previous versions, leading to improved product reliability.
- Samsung’s QLC 9th generation V-NAND has doubled the write speed and improved the data input/output speed by 60% thanks to the advancements in this technology.
- Power consumption for reading and writing data is reduced by about 30% and 50%, respectively, by using low-power technology.
Through channel etching, the company can create vertical channels that enable data transmission in complex V-NAND cells. With this technology, Samsung can offer a higher number of layers compared to previous NAND memories. Also, with a dual layer structure, the memory layers will be arranged in two separate stacks within the chip, ensuring less heat generation while increasing the density by 86%.
The next technology is the Designed Mold, which will adjust the spaces between Word Lines and ensure the uniformity of the cells through the layers. This will help QLC V-NAND achieve consistent and reliable performance, offering a nearly 20% improvement in data retention. Another technology used is the Predictive Program, which will optimize the way data is written to the NAND cells. This will prevent unnecessary changes by predicting the state of cells during a write operation, resulting in approximately 60% better performance for reading and writing data.
Samsung is on its way to meet the demands of the AI market by offering energy-efficient and high-performance NANDs, but it is also expanding its offering for mobile and computing devices.15
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Source: www.itnetwork.rs
