Samsung would quickly throw the cell layers onto the V-NAND flash chips

In 2026, there may be 400 cell layers, and in 2030, 1,000 cell layers, at least according to a recent report.

A The Korean Economic Daily according to his report, in 2026, Samsung would bring its upcoming V-NAND flash chip to over 400 cell layers. In principle, this would be achieved with the BV, i.e. Bonding Vertical, technology, because so many cell layers cannot be extracted from a NAND block, so the design must be divided into at least two blocks.

In the case of the system under construction, it is expected that the storage and peripheral circuits will be manufactured separately, and then they will be vertically connected later. This can increase bit density per unit area by 60% compared to current technology.

By the way, Samsung would go over 1,000 cell layers by 2030, which the company’s management confirmed earlier.