SK Hynix brought 4D NAND with 321 cell layers

The company has already started mass production, and it is estimated that the development will also appear in the products next year.

SK Hynix announced the mass production of its 3D NAND flash chip with 321 cell layers. On paper, the company is actually talking about a 4D NAND solution, but here it is only about the fact that the CMOS logic is not placed next to the cells, but below them, which means that the marketing has colored the story a little. Regarding the technological background, the company achieved the aforementioned cell layer with three NAND blocks.

The company’s new development is a TLC solution and offers 1 terabit capacity. The South Korean company promises that their novelty will appear in products intended for end users in the first half of next year.